Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FP IPA60R099P7XKSA1
- RS Stock No.:
- 222-4875
- Mfr. Part No.:
- IPA60R099P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£14.30
(exc. VAT)
£17.15
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 11 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.86 | £14.30 |
| 25 - 45 | £2.46 | £12.30 |
| 50 - 120 | £2.288 | £11.44 |
| 125 - 245 | £2.144 | £10.72 |
| 250 + | £1.974 | £9.87 |
*price indicative
- RS Stock No.:
- 222-4875
- Mfr. Part No.:
- IPA60R099P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 99 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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