Infineon CoolMOS™ N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP IPB60R040CFD7ATMA1
- RS Stock No.:
- 222-4886
- Mfr. Part No.:
- IPB60R040CFD7ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£3,020.00
(exc. VAT)
£3,620.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £3.02 | £3,020.00 |
*price indicative
- RS Stock No.:
- 222-4886
- Mfr. Part No.:
- IPB60R040CFD7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
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