Infineon CoolMOS™ N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP IPB60R040CFD7ATMA1

Subtotal (1 reel of 1000 units)*

£3,020.00

(exc. VAT)

£3,620.00

(inc. VAT)

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Per Reel*
1000 +£3.02£3,020.00

*price indicative

RS Stock No.:
222-4886
Mfr. Part No.:
IPB60R040CFD7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors

Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions

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