MPN

Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263

RS Stock No.:: 222-4850
Mfr. Part No.:: IMBF170R650M1XTMA1
Brand:: Infineon

Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263

Subtotal (1 reel of 1000 units)*

£1,870.00

(exc. VAT)

£2,240.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 1,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£1.87	£1,870.00

*price indicative

RS Stock No.:: 222-4850
Mfr. Part No.:: IMBF170R650M1XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.4A
	Maximum Drain Source Voltage Vds	1700V
	Package Type	TO-263
	Series	IMBF1
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	650mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.4A
	Maximum Drain Source Voltage Vds 1700V
	Package Type TO-263
	Series IMBF1
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 650mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMBF170R650M1XTMA1

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm