Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1700 V, 7-Pin D2PAK IMBF170R650M1XTMA1

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Subtotal (1 pack of 2 units)*

£8.54

(exc. VAT)

£10.24

(inc. VAT)

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2 - 18£4.27£8.54
20 - 48£3.885£7.77
50 - 98£3.63£7.26
100 - 198£3.375£6.75
200 +£3.115£6.23

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Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.4 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-263-7

Series

IMBF1

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm

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