Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1700 V, 7-Pin D2PAK IMBF170R650M1XTMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

£8.54

(exc. VAT)

£10.24

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,730 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18£4.27£8.54
20 - 48£3.885£7.77
50 - 98£3.63£7.26
100 - 198£3.375£6.75
200 +£3.115£6.23

*price indicative

Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.4 A

Maximum Drain Source Voltage

1700 V

Series

IMBF1

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links