Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1
- RS Stock No.:
- 222-4851
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£8.54
(exc. VAT)
£10.24
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,730 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.27 | £8.54 |
| 20 - 48 | £3.885 | £7.77 |
| 50 - 98 | £3.63 | £7.26 |
| 100 - 198 | £3.375 | £6.75 |
| 200 + | £3.115 | £6.23 |
*price indicative
- RS Stock No.:
- 222-4851
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.4A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | IMBF1 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.4A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series IMBF1 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
Related links
- Infineon IMBF1 N-Channel MOSFET 1700 V, 7-Pin D2PAK IMBF170R650M1XTMA1
- Infineon IMBF1 N-Channel MOSFET 1700 V, 7-Pin D2PAK IMBF170R1K0M1XTMA1
- Infineon N-Channel MOSFET 1700 V, 7-Pin D2PAK IMBF170R450M1XTMA1
- Wolfspeed SiC N-Channel MOSFET 1700 V, 7-Pin D2PAK C2M1000170J
- Littelfuse LSIC1MO170T0750 SiC N-Channel MOSFET 1700 V, 7-Pin D2PAK LSIC1MO170T0750-TU
- Wolfspeed Dual SiC N-Channel MOSFET 1700 V, 7-Pin Half Bridge CAS300M17BM2
- Infineon HEXFET N-Channel MOSFET 100 V, 7-Pin D2PAK-7 IRFS4010TRL7PP
- Infineon N-Channel MOSFET 100 V, 7-Pin D2PAK IPB017N10N5ATMA1


