Infineon CoolMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP020N08N5AKSA1
- RS Stock No.:
- 222-4691
- Mfr. Part No.:
- IPP020N08N5AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.74
(exc. VAT)
£8.08
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 252 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.37 | £6.74 |
| 10 - 18 | £2.865 | £5.73 |
| 20 - 48 | £2.66 | £5.32 |
| 50 - 98 | £2.46 | £4.92 |
| 100 + | £2.295 | £4.59 |
*price indicative
- RS Stock No.:
- 222-4691
- Mfr. Part No.:
- IPP020N08N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 15.95 mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 15.95 mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 80 V, 3-Pin TO-220 IPP020N08N5AKSA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP120N08S403AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon IPP040N08NF2S N-Channel MOSFET 80 V, 3-Pin TO-220 IPP040N08NF2SAKMA1
- Infineon N-Channel MOSFET 80 V, 3-Pin TO-220 IPP80N08S406AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- Infineon IPP016N08NF2S N-Channel MOSFET 80 V, 3-Pin TO-220 IPP016N08NF2SAKMA1
- Toshiba TK N-Channel MOSFET 80 V, 3-Pin TO-220 TK100E08N1