Diodes Inc DMT Plastic N-Channel MOSFET, 16.1 A, 60 V, 8-Pin V-DFN3333 DMT64M8LCG-7
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 10 units)*
£7.33
(exc. VAT)
£8.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,620 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £0.733 | £7.33 |
50 - 90 | £0.716 | £7.16 |
100 - 240 | £0.56 | £5.60 |
250 - 990 | £0.518 | £5.18 |
1000 + | £0.505 | £5.05 |
*price indicative
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 16.1 A | |
Maximum Drain Source Voltage | 60 V | |
Series | DMT | |
Package Type | V-DFN3333 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.004 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Plastic | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 16.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Series DMT | ||
Package Type V-DFN3333 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.004 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Plastic | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
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