DiodesZetex DMT N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Brand:
- DiodesZetex
Get a bulk buy discount
Add 50 more to save £0.85
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£7.33
(exc. VAT)
£8.80
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 1,350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | £0.733 | £7.33 | - |
| 50 - 90 | £0.716 | £7.16 | £0.85 |
| 100 - 240 | £0.56 | £5.60 | £17.30 |
| 250 - 990 | £0.518 | £5.18 | £53.75 |
| 1000 + | £0.505 | £5.05 | £228.00 |
*price indicative
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.16W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 800μm | |
| Length | 3.3mm | |
| Height | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.16W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 800μm | ||
Length 3.3mm | ||
Height 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Related links
- DiodesZetex DMT N-Channel MOSFET 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- DiodesZetex DMT N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333 DMT6007LFG-7
- DiodesZetex DMT N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333 DMT6008LFG-7
- DiodesZetex DMT N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333 DMT6015LFVW-7
- DiodesZetex DMP Type P-Channel MOSFET 30 V Enhancement, 8-Pin VDFN DMP3007SCG-7
- DiodesZetex DMT N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060 DMTH43M8LPS-13
- Microchip Complementary Pair TC6320 1 P-Channel 2 A 8-Pin VDFN