Diodes Inc N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerDI3333-8 DMT6008LFG-7
- RS Stock No.:
- 165-8384
- Mfr. Part No.:
- DMT6008LFG-7
- Brand:
- DiodesZetex
Subtotal (1 reel of 2000 units)*
£540.00
(exc. VAT)
£640.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £0.27 | £540.00 |
*price indicative
- RS Stock No.:
- 165-8384
- Mfr. Part No.:
- DMT6008LFG-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerDI3333-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 41 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 3.35mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 50.4 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerDI3333-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 3.35mm | ||
Number of Elements per Chip 1 | ||
Width 3.35mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 50.4 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc N-Channel MOSFET 60 V, 8-Pin PowerDI3333-8 DMT6008LFG-7
- Diodes Inc N-Channel MOSFET 8-Pin PowerDI3333-8 DMT6007LFG-7
- Diodes Inc DMT35M4LFVW N-Channel MOSFET 30 V, 8-Pin PowerDI3333-8 DMT35M4LFVW-7
- Diodes Inc DMT Plastic N-Channel MOSFET 60 V, 8-Pin PowerDI3333-8 DMT6015LFVW-7
- Diodes Inc DMTH69 N-Channel MOSFET 45.4 A 8-Pin PowerDI3333-8 DMTH69M8LFVWQ-7
- Diodes Inc N-Channel MOSFET 60 V, 8-Pin PowerDI3333-8 DMTH6016LFVWQ-7-A
- Diodes Inc N-Channel MOSFET 60 V, 8-Pin PowerDI3333-8 DMN6069SFVW-7
- Diodes Inc DMN10 N-Channel MOSFET 100 V, 8-Pin PowerDI3333-8 DMN10H170SFGQ-7