Infineon HEXFET N-Channel MOSFET, 27 A, 55 V, 3-Pin DPAK IRFR4105TRPBF

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Subtotal (1 reel of 2000 units)*

£634.00

(exc. VAT)

£760.00

(inc. VAT)

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Temporarily out of stock
  • 10,000 unit(s) shipping from 31 October 2025
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Units
Per unit
Per Reel*
2000 - 2000£0.317£634.00
4000 +£0.301£602.00

*price indicative

RS Stock No.:
218-3110
Mfr. Part No.:
IRFR4105TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.045 Ω

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.

Ultra Low On-Resistance
Fast Switching
Lead free

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