Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 IPP60R125CFD7XKSA1
- RS Stock No.:
- 218-3067
- Mfr. Part No.:
- IPP60R125CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£16.25
(exc. VAT)
£19.50
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 430 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £3.25 | £16.25 |
| 10 - 20 | £2.926 | £14.63 |
| 25 - 45 | £2.73 | £13.65 |
| 50 - 120 | £2.536 | £12.68 |
| 125 + | £2.372 | £11.86 |
*price indicative
- RS Stock No.:
- 218-3067
- Mfr. Part No.:
- IPP60R125CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS CFD7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 92W | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS CFD7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 92W | ||
Length 10.36mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOSª CFD7 N-Channel Power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon technologies.
Ultra-fast body diode
Low gate charge
Best-in-class reverse recovery charge (Qrr)
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
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