MPN

Infineon HEXFET Type N-Channel MOSFET, 119 A, 40 V TO-252

RS Stock No.:: 217-2623
Mfr. Part No.:: IRFR4104TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 119 A, 40 V TO-252

Subtotal (1 reel of 2000 units)*

£764.00

(exc. VAT)

£916.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 2,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2000 +	£0.382	£764.00

*price indicative

RS Stock No.:: 217-2623
Mfr. Part No.:: IRFR4104TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	119A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	5.5mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	140W
	Typical Gate Charge Qg @ Vgs	89nC
	Maximum Operating Temperature	175°C
	Height	6.22mm
	Length	6.73mm
	Width	2.39 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 119A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 5.5mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 140W
	Typical Gate Charge Qg @ Vgs 89nC
	Maximum Operating Temperature 175°C
	Height 6.22mm
	Length 6.73mm
	Width 2.39 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFR4104TRPBF

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance 1

75°C Operating Temperature

Fast Switching R

repetitive Avalanche Allowed up to Tjmax L

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