Infineon HEXFET N-Channel MOSFET, 119 A, 40 V, 3-Pin DPAK IRFR4104TRPBF

Subtotal (1 reel of 2000 units)*

£764.00

(exc. VAT)

£916.00

(inc. VAT)

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2000 +£0.382£764.00

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RS Stock No.:
217-2623
Mfr. Part No.:
IRFR4104TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.5 mO

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance 1
75°C Operating Temperature
Fast Switching R
repetitive Avalanche Allowed up to Tjmax L
ead-Free

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