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Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 IPW60R120P7XKSA1

RS Stock No.:: 217-2587
Mfr. Part No.:: IPW60R120P7XKSA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 IPW60R120P7XKSA1

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Subtotal (1 pack of 5 units)*

£19.35

(exc. VAT)

£23.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,035 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 5	£3.87	£19.35
10 - 20	£3.25	£16.25
25 - 45	£3.058	£15.29
50 - 120	£2.826	£14.13
125 +	£2.632	£13.16

*price indicative

RS Stock No.:: 217-2587
Mfr. Part No.:: IPW60R120P7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	95W
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Operating Temperature	150°C
	Length	6.13mm
	Standards/Approvals	No
	Width	5.21 mm
	Height	41.42mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 95W
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Operating Temperature 150°C
	Length 6.13mm
	Standards/Approvals No
	Width 5.21 mm
	Height 41.42mm
	Automotive Standard No

Datasheet - IPW60R120P7XKSA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available