Infineon CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220 IPP65R150CFDAAKSA1
- RS Stock No.:
- 217-2563
- Mfr. Part No.:
- IPP65R150CFDAAKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£17.20
(exc. VAT)
£20.65
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 935 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £3.44 | £17.20 |
| 10 - 20 | £2.992 | £14.96 |
| 25 - 45 | £2.786 | £13.93 |
| 50 - 120 | £2.614 | £13.07 |
| 125 + | £2.408 | £12.04 |
*price indicative
- RS Stock No.:
- 217-2563
- Mfr. Part No.:
- IPP65R150CFDAAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CFDA | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 195.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Height | 41.42mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CFDA | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 195.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Height 41.42mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard
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