Infineon CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£110.50

(exc. VAT)

£132.50

(inc. VAT)

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  • Final 900 unit(s), ready to ship
Units
Per unit
Per Tube*
50 - 50£2.21£110.50
100 - 200£2.033£101.65
250 +£1.923£96.15

*price indicative

RS Stock No.:
217-2562
Mfr. Part No.:
IPP65R150CFDAAKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22.4A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CFDA

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

195.3W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

16.13mm

Width

5.21 mm

Standards/Approvals

No

Height

41.42mm

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Compliant to AEC Q101 standard

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