Infineon CoolMOS™ CFDA N-Channel MOSFET, 22.4 A, 650 V, 3-Pin TO-220 IPP65R150CFDAAKSA1
- RS Stock No.:
- 217-2562
- Mfr. Part No.:
- IPP65R150CFDAAKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£110.50
(exc. VAT)
£132.50
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 950 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.21 | £110.50 |
| 100 - 200 | £2.033 | £101.65 |
| 250 + | £1.923 | £96.15 |
*price indicative
- RS Stock No.:
- 217-2562
- Mfr. Part No.:
- IPP65R150CFDAAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22.4 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ CFDA | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mO | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 22.4 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ CFDA | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mO | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The Infineon 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard
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