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Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

RS Stock No.:: 217-2524
Mfr. Part No.:: IPD60R360P7SAUMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

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Subtotal (1 pack of 20 units)*

£13.00

(exc. VAT)

£15.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

3,960 unit(s) ready to ship

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Units	Per unit	Per Pack*
20 - 80	£0.65	£13.00
100 - 180	£0.618	£12.36
200 - 480	£0.592	£11.84
500 - 980	£0.566	£11.32
1000 +	£0.527	£10.54

*price indicative

RS Stock No.:: 217-2524
Mfr. Part No.:: IPD60R360P7SAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	41W
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	9.4nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Distrelec Product Id	304-39-407
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 41W
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 9.4nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Distrelec Product Id 304-39-407
	Automotive Standard No

Datasheet - IPD60R360P7SAUMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available