Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin DPAK IPD60R360P7SAUMA1
- RS Stock No.:
- 217-2522
- Mfr. Part No.:
- IPD60R360P7SAUMA1
- Brand:
- Infineon
Save 4% when you buy 5000 units
Subtotal (1 reel of 2500 units)*
£717.50
(exc. VAT)
£860.00
(inc. VAT)
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In Stock
- 2,500 unit(s) ready to ship
- Plus 999,995,000 unit(s) shipping from 05 February 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | £0.287 | £717.50 |
| 5000 + | £0.273 | £682.50 |
*price indicative
- RS Stock No.:
- 217-2522
- Mfr. Part No.:
- IPD60R360P7SAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mO | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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