Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin DPAK IPD60R360P7SAUMA1

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Subtotal (1 reel of 2500 units)*

£717.50

(exc. VAT)

£860.00

(inc. VAT)

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Per Reel*
2500 - 2500£0.287£717.50
5000 +£0.273£682.50

*price indicative

RS Stock No.:
217-2522
Mfr. Part No.:
IPD60R360P7SAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mO

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available

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