MPN

Infineon IPD Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-252

RS Stock No.:: 217-2520
Mfr. Part No.:: IPD60R1K5CEAUMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-252

Bulk discount available

Subtotal (1 reel of 2500 units)*

£385.00

(exc. VAT)

£462.50

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

2,500 unit(s) shipping from 19 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 - 2500	£0.154	£385.00
5000 +	£0.146	£365.00

*price indicative

RS Stock No.:: 217-2520
Mfr. Part No.:: IPD60R1K5CEAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.4nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	49W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.41mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 600V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.4nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 49W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD60R1K5CEAUMA1

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g