Infineon CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 IPP80R450P7XKSA1

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£8.66

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£10.39

(inc. VAT)

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10 - 40£0.866£8.66
50 - 90£0.823£8.23
100 - 240£0.788£7.88
250 - 490£0.753£7.53
500 +£0.701£7.01

*price indicative

Packaging Options:
RS Stock No.:
215-2550
Mfr. Part No.:
IPP80R450P7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

73W

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

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