N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP Infineon IPA60R360P7SXKSA1
- RS Stock No.:
- 215-2480
- Mfr. Part No.:
- IPA60R360P7SXKSA1
- Brand:
- Infineon
21900 In stock - FREE next working day delivery available
Price Each (In a Pack of 20)
£0.779
(exc. VAT)
£0.935
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £0.779 | £15.58 |
| 40 - 80 | £0.74 | £14.80 |
| 100 - 180 | £0.709 | £14.18 |
| 200 - 480 | £0.678 | £13.56 |
| 500 + | £0.631 | £12.62 |
*price indicative
- RS Stock No.:
- 215-2480
- Mfr. Part No.:
- IPA60R360P7SXKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 FP |
| Series | CoolMOS™ P7 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.36 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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