Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7ATMA1

Subtotal (1 pack of 15 units)*

£8.16

(exc. VAT)

£9.795

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,385 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 +£0.544£8.16

*price indicative

Packaging Options:
RS Stock No.:
214-4388
Mfr. Part No.:
IPD60R360P7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

41W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.35mm

Standards/Approvals

No

Length

6.65mm

Width

6.42 mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

Related links