Infineon CoolMOS C6 Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 IPD60R2K0C6ATMA1
- RS Stock No.:
- 214-9043
- Mfr. Part No.:
- IPD60R2K0C6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£14.05
(exc. VAT)
£16.85
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.562 | £14.05 |
| 125 - 225 | £0.534 | £13.35 |
| 250 - 600 | £0.523 | £13.08 |
| 625 - 1225 | £0.489 | £12.23 |
| 1250 + | £0.455 | £11.38 |
*price indicative
- RS Stock No.:
- 214-9043
- Mfr. Part No.:
- IPD60R2K0C6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | CoolMOS C6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 22.3W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series CoolMOS C6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 22.3W | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive
Fully qualified according to JEDEC for Industrial Applications
Related links
- Infineon CoolMOS™ C6 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R2K0C6ATMA1
- STMicroelectronics MDmesh 2.4 A 3-Pin DPAK STD3NK60ZT4
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V, 3-Pin DPAK STD3NK60ZT4
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V, 3-Pin IPAK STD3NK60Z-1
- STMicroelectronics MDmesh 2.4 A 3-Pin TO-220FP STP3NK60ZFP
- ROHM R60 N-Channel MOSFET 600 V, 3-Pin SOT-223-3 R6004END4TL1
- Vishay N-Channel MOSFET 500 V, 3-Pin DPAK IRFR420TRPBF
- STMicroelectronics STripFET N-Channel MOSFET 100 V, 3-Pin SOT-223 STN2NF10