Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

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Subtotal (1 pack of 2 units)*

£12.96

(exc. VAT)

£15.56

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8£6.48£12.96
10 - 18£5.575£11.15
20 - 48£5.185£10.37
50 - 98£4.86£9.72
100 +£4.47£8.94

*price indicative

Packaging Options:
RS Stock No.:
214-4424
Mfr. Part No.:
IPT111N20NFDATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.58 mm

Height

2.4mm

Standards/Approvals

No

Length

10.1mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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