Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1
- RS Stock No.:
- 214-4424
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£12.96
(exc. VAT)
£15.56
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,172 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £6.48 | £12.96 |
| 10 - 18 | £5.575 | £11.15 |
| 20 - 48 | £5.185 | £10.37 |
| 50 - 98 | £4.86 | £9.72 |
| 100 + | £4.47 | £8.94 |
*price indicative
- RS Stock No.:
- 214-4424
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 96A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HSOF | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 96A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HSOF | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
It is RoHS compliant
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin HSOF-8 IPT111N20NFDATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1
- Infineon CoolMOS™ G7 N-Channel MOSFET 600 V, 8-Pin HSOF-8 IPT60R080G7XTMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 8-Pin HSOF-8 IPT60R050G7XTMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT054N15N5ATMA1
- Infineon CoolMOS™ G7 N-Channel MOSFET 600 V, 8-Pin HSOF-8 IPT60R028G7XTMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin HSOF-8 IAUT240N08S5N019ATMA1


