Infineon OptiMOS™ 3 N-Channel MOSFET, 96 A, 200 V, 8-Pin HSOF-8 IPT111N20NFDATMA1
- RS Stock No.:
- 214-4423
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£5,960.00
(exc. VAT)
£7,160.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2000 + | £2.98 | £5,960.00 |
*price indicative
- RS Stock No.:
- 214-4423
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 96 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | HSOF-8 | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.0111 Ω | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 96 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0111 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
It is RoHS compliant
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