Infineon OptiMOS™ 3 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1
- RS Stock No.:
- 178-7450
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£5,840.00
(exc. VAT)
£7,000.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £2.92 | £5,840.00 |
*price indicative
- RS Stock No.:
- 178-7450
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.58mm | |
| Width | 10.1mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.4mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.58mm | ||
Width 10.1mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 156 nC @ 10 V | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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