Vishay SiHB17N80E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80E-GE3

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Subtotal (1 pack of 5 units)*

£22.25

(exc. VAT)

£26.70

(inc. VAT)

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  • Shipping from 10 November 2026
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Units
Per unit
Per Pack*
5 - 20£4.45£22.25
25 - 45£4.006£20.03
50 - 120£3.56£17.80
125 - 245£3.424£17.12
250 +£3.338£16.69

*price indicative

Packaging Options:
RS Stock No.:
204-7227
Mfr. Part No.:
SIHB17N80E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

800V

Series

SiHB17N80E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

122nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

208W

Maximum Operating Temperature

150°C

Height

15.88mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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