Vishay SiHB17N80E N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80E-GE3

Subtotal (1000 units, on reels of 1000)*

£2,090.00

(exc. VAT)

£2,510.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£2.09£2,090.00

*price indicative

RS Stock No.:
204-7226
Mfr. Part No.:
SIHB17N80E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

800V

Series

SiHB17N80E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

208W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

122nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.83mm

Length

10.67mm

Height

15.88mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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