SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L160N120SC1
- RS Stock No.:
- 202-5702
- Mfr. Part No.:
- NTH4L160N120SC1
- Brand:
- onsemi
Available to back order for despatch 24/06/2024
Added
Price Each (In a Tube of 450)
£5.87
(exc. VAT)
£7.04
(inc. VAT)
| Units | Per unit | Per Tube* |
| 450 + | £5.87 | £2,641.50 |
| *price indicative | ||
- RS Stock No.:
- 202-5702
- Mfr. Part No.:
- NTH4L160N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17.3 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Series | NTH |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.224 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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