SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L040N120SC1
- RS Stock No.:
- 202-5698
- Mfr. Part No.:
- NTH4L040N120SC1
- Brand:
- onsemi
450 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 450)
£13.88
(exc. VAT)
£16.66
(inc. VAT)
| Units | Per unit | Per Tube* |
| 450 + | £13.88 | £6,246.00 |
| *price indicative | ||
- RS Stock No.:
- 202-5698
- Mfr. Part No.:
- NTH4L040N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 58 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | NTH |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.056 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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