STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6

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Subtotal (1 pack of 2 units)*

£12.33

(exc. VAT)

£14.796

(inc. VAT)

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  • 998 unit(s) shipping from 13 November 2025
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Units
Per unit
Per Pack*
2 - 48£6.165£12.33
50 - 98£4.40£8.80
100 - 248£4.23£8.46
250 - 498£4.135£8.27
500 +£4.02£8.04

*price indicative

Packaging Options:
RS Stock No.:
202-5496
Mfr. Part No.:
STB33N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

Extremely high dv/dt ruggedness
Zener-protected

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