STMicroelectronics ST SiC N-Channel MOSFET Module, 15 A, 600 V Depletion, 3-Pin TO-220FP STF22N60M6
- RS Stock No.:
- 202-5508
- Mfr. Part No.:
- STF22N60M6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£11.12
(exc. VAT)
£13.345
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 260 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £2.224 | £11.12 |
| 10 + | £2.112 | £10.56 |
*price indicative
- RS Stock No.:
- 202-5508
- Mfr. Part No.:
- STF22N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220FP | |
| Series | ST | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.196 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Series ST | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.196 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 4.75V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology.
Low gate input resistance
100% avalanche tested
Zener-protected
100% avalanche tested
Zener-protected
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