Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

£4,416.00

(exc. VAT)

£5,298.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£1.472£4,416.00

*price indicative

RS Stock No.:
200-6839
Mfr. Part No.:
SIDR638DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.16mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

204nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Height

0.61mm

Automotive Standard

No

The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

Top side cooling feature provides additional venue for thermal transfer

100 % Rg and UIS tested

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