onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN NVMFD6H840NLWFT1G
- RS Stock No.:
- 195-2671
- Mfr. Part No.:
- NVMFD6H840NLWFT1G
- Brand:
- onsemi
Subtotal (1 pack of 15 units)*
£26.115
(exc. VAT)
£31.335
(inc. VAT)
FREE delivery for orders over £50.00
- 4,170 unit(s) ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 135 | £1.741 | £26.12 |
| 150 - 360 | £1.501 | £22.52 |
| 375 + | £1.301 | £19.52 |
*price indicative
- RS Stock No.:
- 195-2671
- Mfr. Part No.:
- NVMFD6H840NLWFT1G
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 74 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Dual | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 6.1mm | |
| Width | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 74 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Dual | ||
Maximum Gate Source Voltage ±20 V | ||
Length 6.1mm | ||
Width 5.1mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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