onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN NVMFD6H840NLT1G

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Subtotal (1 pack of 15 units)*

£10.875

(exc. VAT)

£13.05

(inc. VAT)

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15 +£0.725£10.88

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Packaging Options:
RS Stock No.:
195-2669
Mfr. Part No.:
NVMFD6H840NLT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Length

6.1mm

Maximum Operating Temperature

+175 °C

Width

5.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

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