onsemi N-Channel MOSFET, 35 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS011N04CTWG

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Subtotal (1 pack of 50 units)*

£22.10

(exc. VAT)

£26.50

(inc. VAT)

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Per Pack*
50 - 450£0.442£22.10
500 - 950£0.381£19.05
1000 +£0.33£16.50

*price indicative

Packaging Options:
RS Stock No.:
195-2548
Mfr. Part No.:
NVMYS011N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Width

4.25mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.15mm

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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