onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS014N06CLTWG

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Subtotal (1 pack of 30 units)*

£14.64

(exc. VAT)

£17.58

(inc. VAT)

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Per Pack*
30 - 90£0.488£14.64
120 - 270£0.421£12.63
300 +£0.365£10.95

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Packaging Options:
RS Stock No.:
195-2544
Mfr. Part No.:
NVMYS014N06CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

21.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5mm

Number of Elements per Chip

1

Width

4.25mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

9.7 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.15mm

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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