onsemi NTMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK
- RS Stock No.:
- 195-2532
- Mfr. Part No.:
- NTMYS011N04CTWG
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-2532
- Mfr. Part No.:
- NTMYS011N04CTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMYS011N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 28W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMYS011N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 28W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Length 5mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
Related links
- onsemi N-Channel MOSFET 40 V SOT-669 NTMYS011N04CTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NVMYS011N04CTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NVMYS1D3N04CTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NVMYS7D3N04CLTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NTMYS010N04CLTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NVMYS010N04CLTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NTMYS5D3N04CTWG
- onsemi N-Channel MOSFET 40 V SOT-669 NTMYS7D3N04CLTWG