onsemi N-Channel MOSFET, 35 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS011N04CTWG

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
195-2532
Mfr. Part No.:
NTMYS011N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5mm

Number of Elements per Chip

1

Width

4.25mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.15mm

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free

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