onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Subtotal (1 unit)*
£9.55
(exc. VAT)
£11.46
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 November 2025
Units | Per unit |
---|---|
1 - 9 | £9.55 |
10 + | £8.23 |
*price indicative
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 44 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 162 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.3V | |
Minimum Gate Threshold Voltage | 1.8V | |
Maximum Power Dissipation | 348 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -15 V, +25 V | |
Length | 15.87mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 56 nC @ 20 V | |
Maximum Operating Temperature | +175 °C | |
Width | 4.82mm | |
Transistor Material | SiC | |
Height | 20.82mm | |
Automotive Standard | AEC-Q101 | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 4V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 162 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 348 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -15 V, +25 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 56 nC @ 20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.82mm | ||
Transistor Material SiC | ||
Height 20.82mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 4V | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
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