onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
£9.55
(exc. VAT)
£11.46
(inc. VAT)
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Temporarily out of stock
- Shipping from 19 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £9.55 |
| 10 + | £8.23 |
*price indicative
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 162 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 348 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -15 V, +25 V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 56 nC @ 20 V | |
| Width | 4.82mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 4V | |
| Height | 20.82mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 162 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 348 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -15 V, +25 V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 56 nC @ 20 V | ||
Width 4.82mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 4V | ||
Height 20.82mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
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