onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

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£9.55

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£11.46

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Packaging Options:
RS Stock No.:
189-0419
Mfr. Part No.:
NVHL080N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +25 V

Length

15.87mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

56 nC @ 20 V

Maximum Operating Temperature

+175 °C

Width

4.82mm

Transistor Material

SiC

Height

20.82mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4V

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3


Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive

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