Vishay N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212-8 SiS128LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

£6.34

(exc. VAT)

£7.61

(inc. VAT)

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  • Shipping from 31 December 2025
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Units
Per unit
Per Pack*
10 - 90£0.634£6.34
100 - 240£0.603£6.03
250 - 490£0.54£5.40
500 - 990£0.387£3.87
1000 +£0.305£3.05

*price indicative

Packaging Options:
RS Stock No.:
188-5153
Mfr. Part No.:
SiS128LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

33.7 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20 nC @ 10 V

Length

3.15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.1V

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM

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