Vishay 3 N/P-Channel MOSFET, 30 A, 30 A, 20 A, 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, 10-Pin Triple Die
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Brand:
- Vishay
Subtotal (1 pack of 5 units)*
£15.31
(exc. VAT)
£18.37
(inc. VAT)
FREE delivery for orders over £50.00
- 40 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £3.062 | £15.31 |
*price indicative
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 30 A, 30 A, 20 A | |
Maximum Drain Source Voltage | 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V | |
Package Type | Triple Die | |
Mounting Type | Surface Mount | |
Pin Count | 10 | |
Maximum Drain Source Resistance | 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V | |
Minimum Gate Threshold Voltage | 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V | |
Maximum Power Dissipation | 48 W, 48 W, 60 W | |
Transistor Configuration | Common Drain | |
Maximum Gate Source Voltage | 20 V | |
Typical Gate Charge @ Vgs | 14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1) | |
Number of Elements per Chip | 3 | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Automotive Standard | AEC-Q101 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 30 A, 30 A, 20 A | ||
Maximum Drain Source Voltage 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V | ||
Package Type Triple Die | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Maximum Drain Source Resistance 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V | ||
Minimum Gate Threshold Voltage 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V | ||
Maximum Power Dissipation 48 W, 48 W, 60 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1) | ||
Number of Elements per Chip 3 | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
TrenchFET® power MOSFET
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