Vishay P-Channel MOSFET, 108 A, 30 V, 8-Pin PowerPAK 1212-8S SiSS05DN-T1-GE3

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Subtotal (1 pack of 10 units)*

£8.31

(exc. VAT)

£9.97

(inc. VAT)

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  • Shipping from 24 April 2026
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Units
Per unit
Per Pack*
10 - 90£0.831£8.31
100 - 240£0.815£8.15
250 - 490£0.641£6.41
500 - 990£0.583£5.83
1000 +£0.482£4.82

*price indicative

Packaging Options:
RS Stock No.:
188-5013
Mfr. Part No.:
SiSS05DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.3mm

Length

3.3mm

Minimum Operating Temperature

-55 °C

Height

0.78mm

Forward Diode Voltage

1.1V

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
Enables higher power density

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