P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

RS Stock No.:: 188-5117
Mfr. Part No.:: SiSS61DN-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

Available to back order for despatch 18/11/2024

Price Each (In a Pack of 10)

£0.624

(exc. VAT)

£0.749

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	£0.624	£6.24
100 - 240	£0.593	£5.93
250 - 490	£0.449	£4.49
500 - 990	£0.405	£4.05
1000 +	£0.374	£3.74

*price indicative

RS Stock No.:: 188-5117
Mfr. Part No.:: SiSS61DN-T1-GE3
Brand:: Vishay

Datasheet SiSS61DN-T1-GE3

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	111.9 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.9V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±8 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	3.3mm
Width	3.3mm
Typical Gate Charge @ Vgs	154 nC @ 10 V
Height	0.78mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3

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