Vishay SiSS61DN Type P-Channel MOSFET, 111.9 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

£6.75

(exc. VAT)

£8.10

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90£0.675£6.75
100 - 240£0.642£6.42
250 - 490£0.485£4.85
500 - 990£0.438£4.38
1000 +£0.405£4.05

*price indicative

Packaging Options:
RS Stock No.:
188-5117
Mfr. Part No.:
SiSS61DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

111.9A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

SiSS61DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

65.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

154nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.78mm

Width

3.3 mm

Distrelec Product Id

304-32-537

Automotive Standard

No

P-Channel 20 V (D-S) MOSFET.

TrenchFET® Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

Related links