Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

£6.75

(exc. VAT)

£8.10

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 03 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90£0.675£6.75
100 - 240£0.642£6.42
250 - 490£0.485£4.85
500 - 990£0.438£4.38
1000 +£0.405£4.05

*price indicative

Packaging Options:
RS Stock No.:
188-5117
Mfr. Part No.:
SiSS61DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

111.9 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

154 nC @ 10 V

Length

3.3mm

Width

3.3mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.78mm

P-Channel 20 V (D-S) MOSFET.

TrenchFET® Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package

Related links