Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB SIHP22N60EF-GE3
- RS Stock No.:
- 188-4996
- Mfr. Part No.:
- SIHP22N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£15.91
(exc. VAT)
£19.09
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 4,685 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £3.182 | £15.91 |
| 25 - 45 | £2.864 | £14.32 |
| 50 - 120 | £2.706 | £13.53 |
| 125 - 245 | £2.546 | £12.73 |
| 250 + | £2.39 | £11.95 |
*price indicative
- RS Stock No.:
- 188-4996
- Mfr. Part No.:
- SIHP22N60EF-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 182 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 179 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.51mm | |
| Width | 4.65mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 182 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 179 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.51mm | ||
Width 4.65mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
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