N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB Vishay SIHP22N60EF-GE3

RS Stock No.:: 188-4878
Mfr. Part No.:: SIHP22N60EF-GE3
Brand:: Vishay

N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB Vishay SIHP22N60EF-GE3

4950 In stock - FREE next working day delivery available

Price Each (In a Tube of 50)

£2.528

(exc. VAT)

£3.034

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	£2.528	£126.40
100 - 200	£2.20	£110.00
250 +	£1.871	£93.55

*price indicative

RS Stock No.:: 188-4878
Mfr. Part No.:: SIHP22N60EF-GE3
Brand:: Vishay

Datasheet SIHP22N60EF-GE3

RS Stock No.:: 188-4878
Mfr. Part No.:: SIHP22N60EF-GE3
Brand:: Vishay

Datasheet SIHP22N60EF-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	182 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	179 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	48 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	10.51mm
Width	4.65mm
Height	9.01mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	182 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	179 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	48 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	10.51mm
Width	4.65mm
Height	9.01mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB Vishay SIHP22N60EF-GE3

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