Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK SIHB22N60EF-GE3
- RS Stock No.:
- 188-4976
- Mfr. Part No.:
- SIHB22N60EF-GE3
- Brand:
- Vishay
Subtotal (1 pack of 5 units)*
£6.52
(exc. VAT)
£7.825
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,025 unit(s) ready to ship
- Plus 999,998,970 unit(s) shipping from 24 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.304 | £6.52 |
*price indicative
- RS Stock No.:
- 188-4976
- Mfr. Part No.:
- SIHB22N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 182 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 179 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.41mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Height | 4.57mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 182 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 179 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Length 10.41mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Height 4.57mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
EF Series Power MOSFET With Fast Body Diode.
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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