Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263 SIHB22N60EF-GE3

Subtotal (1 pack of 5 units)*

£18.60

(exc. VAT)

£22.30

(inc. VAT)

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Per Pack*
5 +£3.72£18.60

*price indicative

Packaging Options:
RS Stock No.:
188-4976
Distrelec Article No.:
304-38-846
Mfr. Part No.:
SIHB22N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHB22N60EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

182mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

48nC

Maximum Operating Temperature

150°C

Height

4.57mm

Standards/Approvals

No

Length

10.41mm

Automotive Standard

No

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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