Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK SIHB22N60EF-GE3

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Subtotal (1 pack of 5 units)*

£6.52

(exc. VAT)

£7.825

(inc. VAT)

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5 +£1.304£6.52

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Packaging Options:
RS Stock No.:
188-4976
Mfr. Part No.:
SIHB22N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

182 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

179 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10.41mm

Width

9.65mm

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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