onsemi N-Channel MOSFET, 12 A, 80 V, 8-Pin WDFN NVTFS6H888NTAG

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Packaging Options:
RS Stock No.:
185-9125
Mfr. Part No.:
NVTFS6H888NTAG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

80 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

18 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

4.7 nC @ 10 V

Length

3.15mm

Width

3.15mm

Number of Elements per Chip

1

Height

0.75mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Non Compliant

COO (Country of Origin):
MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (3.3 x 3.3 mm)
Low On-Resistance
Low Capacitance
NVTFS6H850NWF − Wettable Flanks Product
PPAP Capable
Compact Design
Minimizes Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Suitable for Automotive Applications
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body

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