onsemi Dual N-Channel MOSFET, 2.9 A, 30 V, 6-Pin WDFN FDMA2002NZ

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£483.00

(exc. VAT)

£579.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.161£483.00

*price indicative

RS Stock No.:
184-4217
Mfr. Part No.:
FDMA2002NZ
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

268 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±12 V

Width

2mm

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

0.75mm

COO (Country of Origin):
TH
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

2.9 A, 30 V
RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
RDS(ON) = 163 mΩ @ VGS = 2.5 V
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
HBM ESD protection level=1.8kV (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications

Related links