Diodes Inc Dual N-Channel MOSFET, 10 A, 20 V, 6-Pin WDFN DMN2013UFX-7

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Subtotal (1 reel of 3000 units)*

£612.00

(exc. VAT)

£735.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.204£612.00

*price indicative

RS Stock No.:
165-8416
Mfr. Part No.:
DMN2013UFX-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

20 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2.14 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2.1mm

Typical Gate Charge @ Vgs

57.4 nC @ 8 V

Width

5.1mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.8mm

COO (Country of Origin):
CN

N-Channel MOSFET, 12V to 28V, Diodes Inc



MOSFET Transistors, Diodes Inc.

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