onsemi Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 NTJD4401NT1G

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Subtotal (1 reel of 3000 units)*

£231.00

(exc. VAT)

£276.00

(inc. VAT)

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Units
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Per Reel*
3000 +£0.077£231.00

*price indicative

RS Stock No.:
184-1064
Mfr. Part No.:
NTJD4401NT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

910 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-88

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

550 mW

Maximum Gate Source Voltage

±12 V

Length

2.2mm

Number of Elements per Chip

2

Width

1.35mm

Typical Gate Charge @ Vgs

1.3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.1V

COO (Country of Origin):
CN
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.

Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion

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