Diodes Inc N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 DMN2450UFB4-7R
- RS Stock No.:
- 182-6891
- Mfr. Part No.:
- DMN2450UFB4-7R
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)*
£111.00
(exc. VAT)
£132.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 17 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | £0.037 | £111.00 |
| 9000 - 12000 | £0.036 | £108.00 |
| 15000 + | £0.035 | £105.00 |
*price indicative
- RS Stock No.:
- 182-6891
- Mfr. Part No.:
- DMN2450UFB4-7R
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | X2-DFN1006 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 700 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.3 nC @ 10 V | |
| Width | 0.65mm | |
| Length | 1.05mm | |
| Height | 0.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type X2-DFN1006 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 700 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.3 nC @ 10 V | ||
Width 0.65mm | ||
Length 1.05mm | ||
Height 0.35mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Footprint of just 0.6mm2
– Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Load Switch
– Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Load Switch
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