N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B

RS Stock No.:: 770-5128
Mfr. Part No.:: DMN2300UFB4-7B
Brand:: DiodesZetex

N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2300UFB4-7B

14750 In stock - FREE next working day delivery available

Price Each (In a Pack of 50)

£0.239

(exc. VAT)

£0.287

(inc. VAT)

Units	Per unit	Per Pack*
50 +	£0.239	£11.95
*price indicative

RS Stock No.:: 770-5128
Mfr. Part No.:: DMN2300UFB4-7B
Brand:: DiodesZetex

DMN2300UFB4, 20V N-Channel Enhancement Mode MOSFET
Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 770-5128
Mfr. Part No.:: DMN2300UFB4-7B
Brand:: DiodesZetex

DMN2300UFB4, 20V N-Channel Enhancement Mode MOSFET
Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	20 V
Package Type	X2-DFN1006
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.95V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Width	0.65mm
Typical Gate Charge @ Vgs	1.6 nC @ 4.5 V
Length	1.05mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.35mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	20 V
Package Type	X2-DFN1006
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.95V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Width	0.65mm
Typical Gate Charge @ Vgs	1.6 nC @ 4.5 V
Length	1.05mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.35mm

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