Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3

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£10.02

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£12.02

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Units
Per unit
Per Pack*
20 - 180£0.501£10.02
200 - 480£0.382£7.64
500 - 980£0.301£6.02
1000 - 1980£0.251£5.02
2000 +£0.226£4.52

*price indicative

Packaging Options:
RS Stock No.:
180-8076
Mfr. Part No.:
SQ2337ES-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.314 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Certifications


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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